View IRFS59N10DPBF_7705741.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

notes through are on page 11 www.irf.com 1 irfb59n10dpbf IRFS59N10DPBF irfsl59n10dpbf smps mosfet hexfet power mosfet high frequency dc-dc converters benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current v dss r ds(on) max i d 100v 0.025 ? 59a typical smps topologies half-bridge and full-bridge dc-dc converters pd - 95378 d 2 pak irfs59n10d to-220ab irfb59n10d to-262 irfsl59n10d parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 59 i d @ t c = 100c continuous drain current, v gs @ 10v 42 a i dm pulsed drain current 236 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 200 linear derating factor 1.3 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 3.3 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbfin (1.1nm) absolute maximum ratings full-bridge inverters ups / motor control inverters lead-free
irfb/irfs/irfsl59n10dpbf 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 18 ??? ??? s v ds = 50v, i d = 35.4a q g total gate charge ??? 76 114 i d = 35.4a q gs gate-to-source charge ??? 24 36 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 36 54 v gs = 10v, t d(on) turn-on delay time ??? 16 ??? v dd = 50v t r rise time ??? 90 ??? i d = 35.4a t d(off) turn-off delay time ??? 20 ??? r g = 2.5 ? t f fall time ??? 12 ??? v gs = 10v c iss input capacitance ??? 2450 ??? v gs = 0v c oss output capacitance ??? 740 ??? v ds = 25v c rss reverse transfer capacitance ??? 190 ??? pf ? = 1.0mhz c oss output capacitance ??? 3370 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 390 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 690 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 510 mj i ar avalanche current ??? 35.4 a e ar repetitive avalanche energy ??? 20 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 35.4a, v gs = 0v t rr reverse recovery time ??? 130 200 ns t j = 25c, i f = 35.4a q rr reverse recoverycharge ??? 0.75 1.1 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 59 236 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.025 ? v gs = 10v, i d = 35.4a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient ??? 40
irfb/irfs/irfsl59n10dpbf www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 59a 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 4 6 8 10 12 14 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j
irfb/irfs/irfsl59n10dpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35.4a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
irfb/irfs/irfsl59n10dpbf www.irf.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d
irfb/irfs/irfsl59n10dpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 300 600 900 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14.5a 25.0a 35.4a
irfb/irfs/irfsl59n10dpbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

? ?
!"
? #
$% &
& ?
'
($ $( ? )* #$ ? +$, ? ) - #$ ($ !
irfb/irfs/irfsl59n10dpbf 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in t h e as s e mb l y l ine "c" t his is an irf1010 lot code 1789 as s emb le d on ww 19, 1997 part numbe r assembly lot code dat e code year 7 = 1997 line c week 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free"
irfb/irfs/irfsl59n10dpbf www.irf.com 9

dimensions are shown in millimeters (inches) note: "p" in assembly line position indicates "lead-free" f 530s t his is an irf530s with lot code 8024 as s embled on ww 02, 2000 in the as sembly line "l" assembly lot code international rectifier logo part numbe r dat e code ye ar 0 = 2000 we e k 0 2 line l f530s a = assembly site code week 02 p = de s i gnat e s l e ad- f r e e product (optional) rectifier international logo lot code assembly ye ar 0 = 2000 dat e code part number
irfb/irfs/irfsl59n10dpbf 10 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rect if ier int er nat ional as s e mb le d on ww 19, 1997 note: "p " in as s embly line pos i ti on i ndi cates "l ead-f r ee" in the assembly line "c" logo t his is an irl 3103l lot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code assembly int e rnat ional rect ifier product (optional) p = d e s i gn at e s l e ad- f r e e a = as s e mb l y s i t e code week 19 ye ar 7 = 1997 dat e code or
irfb/irfs/irfsl59n10dpbf www.irf.com 11 repetitive rating; pulse width limited by max. junction temperature. i sd 35.4a, di/dt 350a/s, v dd v (br)dss , t j 175c
starting t j = 25c, l = 0.8mh r g = 25 ? , i as = 35.4a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRFS59N10DPBF

	To Download IRFS59N10DPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .